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Molecular dynamics simulation of displacement cascades in zircon

A. P. Shpak, O. Ye. Grechanovsky, A. S. Litovchenko,S. Yu. Sayenko

PROBLEMS OF ATOMIC SCIENCE AND TECHNOLOGY(2007)

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Abstract
Molecular dynamics simulation with Buckingham and Morse empirical potentials has been used to study radiation damage in zircon (ZrSiO4) at 300 K, where a uranium atom was used as the primary knock-on atom with a kinetic energy of 1 keV. The dependence of number of displaced Zr, Si and O atoms versus simulation time and Si-O and O-O RDF functions have been drawn. The results of the MD simulations show that the maximal number of displaced atoms is closely equal to 100 for t approximate to 0.27 ps, and the end number of displaced atoms is closely equal to 70 for t > 1 ps.
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