200 degrees C/5 MHz GaN-based gate driver circuits with 1 nF/4.7 omega RC load for high-temperature high-frequency all-GaN IC applications

ELECTRONICS LETTERS(2020)

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摘要
A GaN-based gate driver circuits have been successfully designed and fabricated using a commercially available 6-inch GaN-on-Si platform. The driver circuits consist of three-stage direct-coupled FET logic (DCFL) inverters featuring monolithically integrated depletion-mode (D-mode) and enhancement-mode (E-mode) high electron mobility transistors (HEMTs). At room temperature (RT), at a supply voltage of 4 V the single-stage DCFL fabricated on the same die exhibits a large gate swing (3.84 V) and large noise margins (logic-low noise margin (NML) of 1.55 V and logic-high noise margin (NMH) of 2.18 V), both of which are desirable for all-GaN IC applications. Meanwhile, the gate driver circuits were characterised up to 200 degrees C on a PCB with a capacitance load of 1 nF in series with 4.7 omega resistance to resemble the load condition. At 200 degrees C, the gate driver circuits function well even at 5 MHz operation frequency. The turn on/off propagation delay and rise/fall time of the gate driver circuits are 5/40 and 22/18 ns, respectively. As far as the authors' knowledge, this is the highest reported operation frequency for GaN-based gate driver circuits under such high temperature, making it very promising for high-temperature high-frequency all-GaN integrated circuit (IC) applications.
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driver circuits,wide band gap semiconductors,logic gates,gallium compounds,HEMT integrated circuits,III-V semiconductors,aluminium compounds,silicon,elemental semiconductors,FET logic inverters,monolithically integrated depletion-mode,enhancement-mode,gate swing,logic-low noise margin,logic-high noise margin,integrated circuit applications,gate driver circuits,RC load,high-temperature high-frequency IC applications,three-stage direct-coupled FET logic inverters,DCFL inverters,monolithically integrated HEMT,depletion-mode HEMT,enhancement-mode HEMT,PCB,turn on-off propagation delay,capacitance 1,0 nF,time 22,0 ns,voltage 4,0 V,voltage 3,84 V,voltage 1,55 V,voltage 2,18 V,frequency 5,0 MHz,temperature 293,0 K to 298,0 K,temperature 200,0 degC,resistance 4,7 ohm,size 6 inch,time 5 ns,time 40 ns,time 22 ns,time 18 ns,GaN-Si
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