Spectroscopic and electrochemical studies of the growth of chemical oxide in SC-1 and SC-2

By combining spectroscopic and electrochemical measurements, the growth of chemical silicon oxide in oxidizing solutions SC-1 and SC-2 has been studied during several hours. On one hand, the SC-1 oxidation is always in quasi-stationary equilibrium between oxidation of the substrate and the dissolution of oxide layer. The analysis of the whole results shows that the structure of the oxide built is evolving. In the other hand, it was found that the growth in SC-2 is in agreement. with a. mechanism of a spreading oxide layer.