III-V selective area growth and epitaxial functional oxides on Si: from Electronic to Photonic devices

ECS Transactions(2016)

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摘要
This review paper presents the challenges for the monolithic integration on silicon substrate by heteroepitaxy of III-V semiconductors selective area growth as well as epitaxial functional oxides. The heteroepitaxy of these materials on a common Si platform would allow the integration of new functionalities and advanced devices in both electronic and photonic areas.
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关键词
epitaxial functional oxides,photonic devices,si
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