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Strain Loss in Epitaxial Si:C Films Induced by Phosphorus Diffusion

B. Yang,J. P. de Souza,K. L. Saenger,S. Bedell,A. Reznicek,T. Adam, M. Hospstaken,D. K. Sadana

ECS Transactions（2008）

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Abstract
The influence of P diffusion oil the thermal stability of epitaxial Si:C films has been studied. P diffusion is shown to greatly contribute to the strain loss in epitaxial Si:C films. It is proposed that the strain loss is mainly caused by the interaction of Si interstitial atoms injected by P diffusion with substitutional C atoms, driving them to non-substitutional lattice sites.
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Key words
epitaxial sic,phosphorus,diffusion
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