Comprehensive Characterization of Dual Implanted Silicon after Electrical Activation Annealing

Phosphorous (P+ 1.0 MeV, 4.0 x 10(13) cm(-2)) and boron (B+ 10 keV, 3.0 x 10(14) cm(-2)) implanted p(-)-Si(100) wafers were prepared to study electrical activation and dopant diffusion properties during thermal annealing. Dual implanted Si wafers were annealed for a wide range of annealing conditions (350-800 degrees C, 60-150s) in a commercially available hot wall-based, rapid thermal annealing (RTA) system. Systematic change of sheet resistance was measured in the dual implanted wafers annealed under different RTA conditions. P and B depth profiles measured by secondary ion mass spectroscopy (SIMS) did not show significant change in all RTA conditions. Room temperature photoluminescence (RTPL) spectra and Raman spectra were measured from all wafers under various excitation wavelengths (650 and 785 nm for RTPL and 363.8, 441.6, 457.9, 488.0 and 514.5 nm for Raman). RTPL spectra showed large variations in intensity and wavelength distribution corresponding to the resulting sheet resistance and RTA conditions. Raman spectra showed gradual increase of intensity and change of Raman peak positions and FWHM at the RTA temperatures for implant damage recovery and electrical activation of dual implanted Si wafers.