Effects of Oxygen Source on Film Properties of Atomic-Layer-Deposited La-Silicate Film Using La[N(SiMe3)(2)](3)

The effect of oxygen sources, i.e. O-3 or H2O, on chemical composition, dielectric constant and leakage current density of atomic-layer-deposited La-silicate films was examined. The dielectric constant of La-silicate films grown using O-3 was similar to 8.0, which was lower than that of La-silicate films grown using H2O, similar to 11.7 due to the higher Si concentrations. However, leakage current density of La-silicate films grown using O-3 was about 3 orders of magnitude lower than that of La-silicate films grown using H2O at an identical capacitance-equivalent-thickness (but almost half the physical thickness), due to the higher Si concentrations and less La-carbonate formation. (C) 2012 The Electrochemical Society. All rights reserved.