Growth mechanism and field emission of B doped AlN films
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS(2024)
Abstract
This paper highlights the effect of boron dopant on the field emission and growth mechanism of AlN films. The films have been grown by reactive RF magnetron sputtering method. For undoped films, columnar AlN structure was obtained. In the case of boron doped AlN films, the structure growth proceeded gradually through four layers of different thicknesses and structures. It was found that boron favors the formation of an amorphous layer within which oxygen and boron based precipitates develops, retarding the growth of columnar morphology. Depth profiling X-ray photoelectron spectroscopy analyses confirm the presence of B-O, B-N, Al-B and Al-O groups.The study on the field emission (FE) properties of undoped and B doped AlN films on Si substrates indicates that the addition of boron allow to improve FE properties with low turn on field of 2.6 V/mu m and low threshold filed of 3.07 V/mu m. Such good field emission properties can be attributed to the formation of densely nanograined surface and the appearance of boron based groups.
MoreTranslated text
Key words
Boron based groups,Field emission,Nanograined surface,RF magnetron sputtering,AlN
AI Read Science
Must-Reading Tree
Example
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined