Deuterium Retention in Silicon Carbide Materials
user-5d8054e8530c708f9920ccce(2019)
摘要
Silicon Carbide (SiC) is a low Z material discussed as an alternative to graphite for fusion devices. The retention
of hydrogenous species is an important plasma-surface interaction property. Deuterium was implanted into SiC,
SiCf/SiC, Cf/C-SiC and SiC coated graphite under various particle energy and substrate temperature conditions. A
TDS process was used to characterise the deuterium retention of the implanted specimens. While all SiC materials show elevated retention levels compared to graphite, the differences are limited to about a factor of two
over the range of parameters investigated.
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关键词
Silicon carbide,Graphite,Deuterium,Particle,Materials science,Substrate (chemistry),Chemical engineering,Fusion
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