OPTICAL AND STRUCTURAL CHARACTERIZATION OF YSZ THIN FILMS DEPOSITED BY EXCIMER LASER ABLATION FOR PLANAR POTENTIOMETRIC OXYGEN SENSORS APPLICATIONS

We have performed optical and structural characterization of Yttria Stabilized Zirconia (YSZ) thin films prepared by pulsed laser deposition (PLD) on Si (100) and Pt/Si (100) substrates from the ablation of a 8YSZ target by ArF excimer laser. X-ray Diffraction (XRD) analysis stated orthorhombic films with [111] preferential orientation for Pt/ Si substrate and cubic phase for Si (100) substrate. Secondary Ion Mass Spectrometry (SIMS) investigation shows a stoichiometric transfer of target composition to the substrates. By using Atomic Force Microscopy (AFM) and Variable Angle Spectroscopic Ellipsometry (VASE) we have determined the thickness, roughness, and refractive indices of thin films. Ellipsometric data were obtained with the Cauchy model in the spectral range 400-1000 nm, at three angle of incidence: 60 degrees, 65 degrees, and 70 degrees. It was obtained high-k dense YSZ thin films deposited on Si (100) with applications for electrolyte of ionic devices, like oxygen sensors.