Analysis of Be doping influence on strained GaAsP layer grown on GaAs substrate by MBE

GaAs1-xPx/GaAs compound materials are used in the Negative electron affinity (NEA) III-V semiconductor photocathode for 532 nm sensitive. The author studies 880 degrees C, 900 degrees C and 920 degrees C Be cell temperature for material performance influence by HR XRD, AFM, ECV and Hall system. Below the 900 degrees C of the Be cell, the material performance were improved, which resulted in smaller surface roughness and lower threading dislocation density. Since Be doping is essential for GaAsP photocathode of GENIII imaging intensifier, these results are useful for improving the GaAsP photocathode material properties and performance of device.