Annealing effect on the photodiode properties of Be implanted InSb

In this work, Be ions were used for p-type doping by implantation because of its light mass and consequently lower damage introduction rate. Photodiode properties of implanted InSb with both conventional annealing and rapid thermal annealing were also presented. The p-on-n structure samples were fabricated by Be ions bombarding with the doses of 2x10(14) cm(-2) and 5x10(14) cm(-2) at room temperature. The implanting energy was chosen at 100KeV, 120KeV and 140KeV, respectively. Then SIMS measurements were taken to confirm the depth and doping concentration distribution. The rapid thermal annealing and conventional annealing were employed to make the comparison. The InSb photodiodes were fabricated using the process including mesa etching, passivation, and metallization. The current-voltage curves with both annealing methods were obtained at 77K, showing that the diodes with annealing condition of 350 square.60 minutes has the highest zero-bias resistance. The diodes by conventional furnace annealing have better performance than that of rapid thermal annealing.