Ultra-low threshold InAs/GaAs quantum dot microdisk lasers on planar on-axis Si (001) substrates

Monolithic integration of efficient HI-V light-emitting sources on planar on-axis Si (001) has been recognized as an enabling technology for realizing Si-based photonic integrated circuits (PICs). The field of microdisk lasers employing quantum dot (QD) materials is gaining significant momentum because it allows massive-scalable, streamlined fabrication of Si-based PICs to be made cost effectively. Here, we present InAs/GaAs QD microdisk lasers monolithically grown on on-axis Si (001) substrate with an ultra-low lasing threshold at room temperature under continuous-wave optical pumping. The lasing characteristics of microdisk lasers with small diameter (D) around 2 mu m and sub- wavelength scale (D similar to 1.1 mu m) are demonstrated, with a lasing threshold as low as similar to 3 mu W. The promising lasing characteristics of the microdisk lasers with ultra-low power consumption and small footprint represent a major advance towards large-scale, low-cost integration of laser sources on the Si platform. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement