WeChat Mini Program
Old Version Features

Top-Bottom Gate Coupling Effect on Low Frequency Noise in a Schottky Junction Gated Silicon Nanowire Field-Effect Transistor

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY(2019)

Cited 4|Views5
Key words
Schottky junction gate,silicon nanowire,low frequency noise,substrate bias
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined