Dual-Storage-Port Nonvolatile SRAM Based on Back-End-of-the-Line Processed Hf_0.5Zr_0.5O Ferroelectric Capacitors Towards 3D Selector-Free Cross-Point Memory

Hao Jiang, Owen Li,Wenliang Chen,T. P. Ma

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY（2020）

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Key words

Capacitors,Random access memory,Nonvolatile memory,Three-dimensional displays,Voltage measurement,Fabrication,Current measurement,Nonvolatile SRAM,ferroelectric capacitor,selector-free,3D cross-point memory

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Dual-Storage-Port Nonvolatile SRAM Based on Back-End-of-the-Line Processed Hf0.5Zr0.5O Ferroelectric Capacitors Towards 3D Selector-Free Cross-Point Memory

Dual-Storage-Port Nonvolatile SRAM Based on Back-End-of-the-Line Processed Hf_0.5Zr_0.5O Ferroelectric Capacitors Towards 3D Selector-Free Cross-Point Memory