An innovative TPV device design based on narrow gap IV-VI semiconductor MQW structures

A thermophotovoltaic (TPV) device design based on multiple quantum well (MQW) materials composed of Pb0.81Sn0.19Se wells and Pb0.80Sr0.20Se barriers, which are nanostructured materials that can be gown on low-cost silicon, was modeled to predict electrical power generation densities. MQW materials with intersubband energy gaps of 343 meV and 450 meV in a dual junction configuration were studied. For a thermal radiator at a temperature of 1364 degrees C the short circuit current density was estimated to be 12.1 A/cm(2) for each junction. Open circuit voltages for each junction ranged from 130 mV to 262 mV depending on bandgap and temperature. Power generation densities for this dual junction device increased from 2.7 W/cm(2) to 3.4 W/cm(2) as temperature decreased from 50 degrees C to 7 degrees C. Using a conservative value of $1/cm(2) for the manufacturing of this silicon-based TPV device technology, the costs for this novel electrical power generation technology are projected to be less than $0.30/W.