THE INDENTATION OF GAALAS AND GAINAS AT ROOM-TEMPERATURE
INSTITUTE OF PHYSICS CONFERENCE SERIES（1991）
摘要
The occurrence of microtwinning in the <110> rosette arms is compared, after indentation of the (001) surface, for Ga0.47In0.53As and Ga0.7Al0.3As. The effect of doping in the GaAlAs alloy has been studied and the orientation of the {111} twinning planes determined. It is concluded that p-doping and/or the substitution of In for Al changes the twin plane orientations compared with n-doped GaAlAs.
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