Growth and characterization of amber light-emitting diodes with dual-wavelength InGaN/GaN multiple-quantum-well structures

We report the growth of a dual-wavelength green-amber light-emitting diode (LED) structure. Such dual-wavelength multiple quantum wells (MQWs) structures not only assisted the releasing of the strain, accordingly improved the crystal quality of MQW heterointerfaces, but also enhanced the incorporation of indium atoms amid growth of the high indium-content QWs. The high-resolution x-ray diffraction (HR-XRD) measurement showed multi-order satellite peaks, implying the abrupt heterointerfaces formed between MQWs in the LED sample. It shows a distinct dual wavelength emission characteristics in the temperature-dependent photoluminescence (TDPL). Furthermore, only a single amber peak around 591-609 nm was emitted with a small blue shift at a current injection from 5 to 100 mA in the electroluminescence (EL) characterization. The full-width at half-maximum (FWHM) of these peaks just shows a little fluctuation.