Demonstrating antiphase domain boundary-free GaAs buffer layer on zero off-cut Si (001) substrate for interfacial misfit dislocation GaSb film by metalorganic chemical vapor deposition
MATERIALS RESEARCH EXPRESS(2017)
摘要
High quality 40 nm GaSb thin film was grown on the zero off-cut Si (001)-oriented substrate using metalorganic chemical vapor deposition with the temperature-graded GaAs buffer layer. The growth time of the GaAs nucleation layer, which was deposited at a low temperature of 490 degrees C, is systematically investigated in this paper. Cross-sections of the high resolution transmission electron microscopy images indicate that the GaAs compound formed 3D-islands first before to quasi-2D islands, and finally formed uniform GaAs layer. The optimum thickness of the 490 degrees C-GaAs layer was found to be 10 nm to suppress the formation of antiphase domain boundaries (APDs). The thin GaAs nucleation layer had a root-mean-square surface roughness of 0.483 nm. This allows the continued high temperature GaAs buffer layer to be achieved with low threading dislocation density of around 7.1 x 10(6) cm(-2) and almost invisible APDs. Finally, a fully relaxed GaSb film was grown on the top of the GaAs/Si heterostructure using interfacial misfit dislocation growth mode. These results indicate that the GaSb epitaxial layer can be grown on Si substrate with GaAs buffer layer for future p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) applications.
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关键词
MOCVD,Sb-based compound III-V semiconductors,IMF,APD
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