Characterization of Fe doped n-CuSCN/p-Cu2S solid-state photovoltaic cell

Doping wide bandgap (similar to 3.0 eV) CuSCN with Fe impurity become favorable to absorb visible spectrum and converts its p type properties into n type. The Solid state cell made from Fe doped n-CuSCN and p-Cu2S shows a remarkable photocurrent due to the formation of p-n junction for the first time. Here Fe doped CuSCN layer is fabricated by immersing a well cleaned Cu plate in a solution containing of 0.2 M KSCN and 0.005 M FeSO4 for 18 h and p-Cu2S layer is fabricated by immersing in a 0.0001 M aqueous (NH4)(2)S solution. The materials characterization of the fabricated samples are studied using Scanning Electron Microscopy (SEM), Energy Dispersive Xray (EDX) patterns, Fourier Transform Infrared (FTIR) spectra and X ray Diffraction (XRD) patterns.