N-Electrode Optimization of GaN-Based Vertical Light-Emitting Diode Single-Chip with 3-W Output Power

N-type electrode optimization of GaN-based vertical light-emitting diode (VLED) single chip with 3-W output power is reported. The various n-type electrode designs were proposed and simulated to optimize the output power and operating voltage. In addition, the LED chip with optimized n-type electrode design was fabricated in the form of a Vertical-injection structure with chip dimensions of 2x2 mm(2). Electrical and optical characteristics of the VLED were measured up to 3 A injection current under pulsed operation condition. Output power and forward voltage at 2.7 A were obtained to be 3.1 W and 3.67 V, respectively.