Growth of high quality 3C-SiC on a Si(111) substrate by chemical vapor deposition

High quality 3C-SiC epitaxial films were grown on Si(111) substrates by pyrolizing tetramethyl-silane(TMS) using the chemical vapor deposition method. The structural properties of the SiC films grown under various growth conditions achieved by varying the growth temperature and time, the flow rates of the TMS and the hydrogen, the tilted angle of the susceptor, and the pressure were investigated using X-ray diffraction (XRD), double-crystal X-ray diffraction (DCXRD), scanning electron microscopy (SEM), and Raman spectroscopy. The single crystals of 3C-SiC films were grown along the [111] direction. The fun width at half maximum of the DCXRD peak for the 3C-SiC film grown under the optimum conditions was 52 arcsec. The narrow width of the DCXRD peak indicates the growth of high quality 3C-SiC film on Si, comparable to those of other heteroepitaxial growths of 3C-SiC on 6H-SIC.