Characterization of alpha-Ga2O3 epilayers grown on cone-shape patterned sapphire substrate by halide vapor phase epitaxy

In this study, we demonstrated a characterization of alpha-Ga2O3 grown on a cone-shape patterned sapphire substrate by using the halide vapor phase epitaxy. An alpha-Ga2O3 was grown on different size of PSS and c-plane sapphire substrate for comparison to confirm the effect of PSS. In addition, growth time of alpha-Ga2O3 was gradually increased to confirm growth mechanism of alpha-Ga2O3 grown on the PSS. A growth temperature was changed to 470-550 degrees C. It can be analyzed growth conditions and mechanisms on the cone-shape PSS, resulting in a significant decrease in the FWHM value of an asymmetric plane (10-14) of alpha-Ga2O3, due to lateral growth that occurs during the growth process.