Search
ChatPaper
AI Writing
analysis
Analysis
编组
Open Data
more
More
RankingsMust ReadingJournal&ConferenceAI TRAI HistoryMaster Reading TreeXiaomai's Star TalentsTrajectoryTalentNDI TrackerOpenAI sign Language
VIPCreated with Sketch.

Crystal structure investigation of AlN crystal grown on 6H-SiC seed by a physical vapor transport method

Hee-Won Shin,Dong-Hoon Lee,Hwang-Ju Kim,Mi-Seon Park,Yeon-Suk Jang,Won-Jae Lee,Jung-Gon Kim,Seong-Min Jeong,Myung-Hyun Lee,Won-Seon Seo

JOURNAL OF THE KOREAN CRYSTAL GROWTH AND CRYSTAL TECHNOLOGY（2016）

Cited 1|Views11
No score
Abstract
The effect of process parameters such as the growth pressure and temperature on the AlN crystal growth has been investigated. AlN crystal was grown onto 6H-SiC seed crystal using PVT (Physical Vapor Transport) method. Crystal properties and morphology of AlN crystal was changed with growth pressure and temperature. Raman analysis confirmed that AlN crystals with different orientation were successfully grown on SiC seed crystal.
More
Translated text
Key words
Aluminum nitride,AlN,PVT (Physical Vapor Transport),Growth pressure,Growth temperature
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined