Optoelectronic properties of lateral MoS(2)p-nhomojunction implemented by selectivep-type doping using nitrogen plasma

The sharp interface between thep- andn-type two-dimensional semiconductors is of great importance to realize large-scale production of optoelectronic devices based onp-njunction. In this work, we report a lateral MoS(2)p-nhomojunction implemented by area selective nitrogen plasma doping controlled by toroidal magnetic field. Nitrogen plasma was used to modulate MoS(2)thin films from naturallyn-type top-type, and thus form a lateralp-nhomojunction with the remaining part of the pristinen-type MoS2. Characterization using Raman spectroscopy, photoluminescence and atomic force microscope was carried out to identify thep-type doping effect with low surface damage. The optoelectronic properties based on band structure and carrier transport were discussed. At last, the current-voltage characteristics of the homojunction were investigated and a typical rectifying effect was exhibited. Under AM 1.5 G illumination, solar cells based on the lateralp-nhomojunction displayed photovoltaic properties. The controllable doping technique and the realization ofp-njunction without transfer demonstrate the potential for use in various optoelectronic devices.