Characterisation of Au/n-Si and Pt/p-Si by HRTEM and XRD

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS(2010)

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摘要
This material contains the TEM analyses of Pt and Au silicides compared with XRD. By using TEM microscopy we study the interfaces of Au/n-Si and Flip-Si. We can establish the phases of formation the gold and platinum silicides from Au and Pt deposed on n-Si and p-Si. For the Au/n-Si interfaces we study the formation of the interfaces and phases the modification of Au precipitates in Si monocrystalline through of treatment from 350 degrees C up to 459 degrees C. For the Pt/p-Si interfaces we study the formation of the interfaces and phases the modification of Pt precipitates in Si monocrystalline through of treatment from 400 degrees C up to 800 degrees C.
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关键词
Silicides,diffraction X (XRD),electronic microscopy (TEM)
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