Characterisation of Au/n-Si and Pt/p-Si by HRTEM and XRD
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS(2010)
摘要
This material contains the TEM analyses of Pt and Au silicides compared with XRD. By using TEM microscopy we study the interfaces of Au/n-Si and Flip-Si. We can establish the phases of formation the gold and platinum silicides from Au and Pt deposed on n-Si and p-Si. For the Au/n-Si interfaces we study the formation of the interfaces and phases the modification of Au precipitates in Si monocrystalline through of treatment from 350 degrees C up to 459 degrees C. For the Pt/p-Si interfaces we study the formation of the interfaces and phases the modification of Pt precipitates in Si monocrystalline through of treatment from 400 degrees C up to 800 degrees C.
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关键词
Silicides,diffraction X (XRD),electronic microscopy (TEM)
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