The ideal doping concentration of silicon wafer for single junction hybrid n-Si /PEDOT: PSS solar cells with 3.2% elevated PCE and V_oc of 620 mV

Increasing the open circuit voltage of organic/Si-based hetero-junction solar cells (HSCs) is an efficient path for improving its photoelectric conversion efficiency (PCE). Commonly, increasing the doping concentration (N-D) for silicon planar substrate could enhance the open circuit voltage (V-oc). Comparing with other groups used 10(15) cm(-3) and other various doping level, the selected 10(17) cm(-3) doping concentration, as the ideal doping level, could enhance 100 mV for V-oc and maximum increase the PCE up to 12.54% without any additional antireflection (AR) layer deposition. To our knowledge, this obtained V-oc of 620 mV is a prominent reported value for n-Si/PEDOT: PSS solar devices without any additional antireflection (AR) layer deposition. Meanwhile, this research work clarifies that the PCE is inconsistently increased with the doping concentration, and 10(18) cm(-3) or higher doping concentration would import internal defects and reduce the PEC. This investigation of silicon wafer's optimal doping level paves a utility way for easily enhancing the efficiency of industrialized Si/PEDOT: PSS solar cells with low-cost fabrication technologies.