The effect of radiation on the forward and reverse bias current-voltage (I-V) characteristics of Au/(Bi₄Ti₃O₁₂/SiO₂)/n -Si (MFIS) structures

Determining the radiation effects on the basic electrical parameters of the fabricated high-dielectric MFIS structures, they were exposed to the high-energy(60)Co gamma-rays. For this purpose, the values of ideality factor (n), barrier height (phi(B)) and series resistance (R-s) were extracted from the forward biasI-Vdata before and after irradiation by using various methods such as standard thermionic emission (TE) theory, Cheung's and Norde functions. Additionally, the energy-dependent profile of surface statesN(ss)was extracted by considering voltage dependence ofn,phi(B)andR(s)and compared each other. Experimental results show that the reverse saturation current (I-o),nandR(s)values increase with increasing radiation dose, but phi(B)decreases. When the value ofR(s)is considered in the calculation ofN(ss), they were found to be considerably decreased. The observed low discrepancies betweenN(ss)after irradiation show that the use of a high-dielectric ferroelectric interlayer leads to an increase in the resistance of MS to radiation. It is more important to fabricate radiation-resisted electronic device, especially in the satellites due to hard radiation in space. As a result,N-ss,R(s)and the existence of interlayer are more effectual on theI-Vcharacteristics which must be considered in the electrical parameter calculation.