Ultra-high-efficiency near-infrared Ga2O3:Cr(3+)phosphor and controlling of phytochrome

Phosphor-converted light-emitting diodes (LEDs) have recently become a promising candidate for next-generation devices used in agriculture and horticulture. In principle, they can overcome the limitations of regular daily sunshine. Here, the principle of LED-promoted plant growth was demonstrated by using the Ga2O3:Cr(3+)phosphor with an extremely high quantum yield of 92.4%. The detailed structural and luminescent properties were characterized using X-ray diffraction, temperature-dependent photoluminescence, and pressure-dependent photoluminescence. The results reveal the unique two electronic spin-forbidden transition emissions (R1 and R2) of the Ga2O3:Cr(3+)phosphor. Plant growth experiments were also conducted to evaluate the practical applications of the as-prepared phosphors, showing that they exhibit obvious positive effects on plants. This work reveals the important role of LEDs in agriculture and horticulture, as well as their potential practical applications.