衬底负偏压对溅射Ta2O5薄膜晶化温度及介电性能的影响
JOURNAL OF INORGANIC MATERIALS（2004）
Abstract
采用磁控溅射法,在衬底温度为620°C时,通过引入合适的衬底负偏压(100～200V),获得了结晶良好的Ta2O5薄膜.衬底负偏压增强了正离子对衬底表面的轰击作用,加速了其在衬底表面的松弛扩散效应,从而降低了Ta2O5薄膜的晶化温度,改善了其结晶性.同时,C-V测试结果表明:衬底负偏压进一步改善了Ta2O5薄膜的介电性能.
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Key words
Ta2O5,dielectric films,crystallization temperature,bias
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