1 550 nm VCSELs for long-reach optical interconnects

Long-wavelength VCSELs on an InP substrate was designed and fabricated with an active layer of 1550 nm. The top Distributed Bragg Reflection (DBR) mirror system has been constructed by fabricating 4. 5 pairs of SiO2/Si top DBRs. The threshold current was 20 mA and maximum output power around 7 mu W under continuous wave (CW) operation at room temperature. More importantly, the lasing spectrum is 1554 nm and the full width at half maximum is 3 nm.