Determination of Zn-containing sites in beta-Ga(2)O(3)film grown through mist chemical vapor deposition via X-ray absorption spectroscopy

Noritake Isomura,Tatsuji Nagaoka,Yukihiko Watanabe,Katsuhiro Kutsuki,Hiroyuki Nishinaka,Masahiro Yoshimoto

JAPANESE JOURNAL OF APPLIED PHYSICS（2020）

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摘要

The atomic structure of Zn for the Zn-doped beta-Ga(2)O(3)film formed through mist chemical vapor deposition was investigated via X-ray absorption spectroscopy using a high-sensitivity detector and spectra simulations. The measured and simulated spectra agree, revealing that Zn atoms are located at substitutional Ga sites and at both tetrahedral and octahedral sites, not one of the two.

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关键词

X-ray absorption near edge structure (XANES),Density-functional theory (DFT),mist chemical vapor deposition (mist CVD),Zinc (Zn),Gallium oxide (Ga2O3)

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