X-ray structural analysis of an epitaxially grown Ag film/Si(111)root 3 x root 3-B substrate interface

We investigated the structure of the Si(111)root 3 x root 3-B surface and epitaxially grown Ag(111) film/ surface X-ray diffraction, An analysis of their I truncation rod and fractional order rod scatterings ucture of the Si(11 x surface and previous theoretical studies when taking into account surface defects. At the Ag film/Si(111) root 3x root 3-B substrate interface, the Si(111)root 3 x root 3-B surface not experimentally determined positions of Ag atoms were displaced from thei deal Ag(11) bulk sites, and bottom layer of the Ag film at the interface. The 3 x 3 periodic corrugation was transferred, albeit daminant onsidered to be the origin of the 3 x 3 periodic pattern at the Ag film surface on the Si(111)root 3x root 3 previous scanning tunneling microscope study. (C) 2018 The Japan Society of Applied Physics.