Study on operational characteristics of electron-bombarded silicon avalanche diode (EBSAD) hybrid photodetector

Vacuum-semiconductor hybrid photodetector is a new kind of photoelectric detecting device. In this paper, the basic structure and principle of electron bombarded avalanche diode hybrid photodetector are introduced. Then a sample of electron bombarded silicon avalanche diode hybrid photodetector is successfully fabricated. The results show that the response range of the photodetector is 300nm-800nm, and the electron bombarded gain is more than 600 times under the high voltage of -8000V. The breakdown voltage of silicon avalanche diode avalanche is about -202V. The dark current of device under linear avalanche mode with gain equals 30 is about 3.2nA. The total gain of the tube after electron bombarded gain and avalanche gain are cascaded can be up to 1.5 x 104.