Pursuing low infrared emissivity materials with wider coverage band in ZrB2-CeO2 compounds and their reaction mechanisms

Low infrared emissivity in 3-5 mu m or 8-14 mu m band has been realized in different host materials. Realizing the low infrared emissivity in single material covering the entire band is rarely achieved. This research explores a binary system of ultra-high temperature ceramic ZrB2-CeO2 composites prepared by solid state sintering. their phase composition, microstructure evolution, reaction mechanism and infrared emissivity performance were discussed in detail. It was found that CeO2, ZrB2, ZrO2, and ZrnCe1-nO2 existed in the sample in addition to the coated glass phase of CeO2 on the surface of the sample. In-situ HRTEM results clearly revealed a series of reaction mechanism of CeO2 and ZrB2. With the increase of sintering temperature, the CeO2 particles gradually transformed into a glass phase, and were distributed on the surface of ZrB2 particles, and ZrO2 was formed on the surface of ZrB2, simultaneously. Consequently, ZrnCe1-nO2 is formed as the reaction of ZrO2 and CeO2. Compared with the infrared emissivity spectra of pure CeO2 and ZrB2, a low infrared emissivity less than 0.2 in a wider coverage band of 3-5 and 8-14 mu m in ZrB2-CeO2 compounds was achieved as a result of synergistic interaction between CeO2 and ZrB2. The obtained information about the phase composition and microstructure evolution helps to realize low infrared emissivity in a wider coverage band in compounds via composition and microstructure modification.