Quantitative Analysis of alpha-CL-20 Polymorphic Impurity in epsilon-CL-20 using Dispersive Raman Spectroscopy

CENTRAL EUROPEAN JOURNAL OF ENERGETIC MATERIALS(2013)

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摘要
alpha-CL-20 polymorphic impurity in epsilon-CL-20 studies have been carried out using Dispersive Raman Spectroscopy. epsilon-, beta-, alpha- and gamma-CL-20 polymorphs were produced using crystallization methods with sample recovery from the solution being >90%, and chemical purity of about 99%. The polymorphs prepared were characterized using Dispersive Raman Spectroscopy over the Raman shift region of 100-3500 cm(-1) using a 514 nm argon ion laser. The experimental studies were supported by ab initio computations performed at B3LYP level using a 6-31+G** basis set. The computed vibrational frequencies of the CL-20 conformers correspond to the epsilon, beta and alpha or gamma-CL-20 polymorphs when compared with the observed frequencies. alpha-CL-20 shows a distinct feature at 280 cm(-1) as compared with those of the epsilon-CL-20 polymorph. Using Dispersive Raman Spectroscopy, a linear relationship was demonstrated for the absolute peak height and absolute peak area ratio of alpha-CL-20 versus the weight percent of alpha-CL-20. This method enables a detection limit of this polymorphic impurity down to 2 wt%.
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关键词
CL-20,polymorphs,alpha-CL-20 impurity,Dispersive Raman Spectroscopy
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