Analytical Model for Heat Absorption: Lessons Learned From a One Dimensional Model

An analytical model was constructed of a single silicon crystal monochromator. This model was used to examine the heat transfer processes within the monochromator. It was discovered that extracting heat from the top surface of the monochromator could cause the peak temperature to be below the surface of the crystal; this dislocation was shown to be approximately 10% of the thickness of the crystal when 20% of the input power was extracted from the top surface.