Stark Shift and Field Induced Tunneling in AlxGa1-xN/GaN Single Quantum Well

Effect of both positive and negative dc electric fields on the Al0.3Ga0.7N/GaN/Al0.3Ga0.7 N heterojnuctions based single quantum well is studied through the Stark shifted energy levels and resonance widths which are related to tunneling rates. The built-in electric field in the quantum well is calculated using the polarizations due to spontaneous and piezoelectric fields. The results show that a high positive electric field is needed for tunneling under positive electric field over come to negative direction of the built-in electric field. The tunneling under negative bias can take place at lower field since both the negative electric field and internal electric field are in the same direction.