Optimization of Optical and Electrical Characteristics of Solution Processed Ga Doped Zno Thin Film Nano Structures

In this study Ga doped ZnO (GZO) transparent conducting thin films were grown on glass substrate using sol gel spin coating method. The Ga content in GZO was varied by calculated amount of Ga doping source added in solvent. The structural, optoelectronic and electrical properties of GZO thin films were investigated in detail. The GZO Thin films have hexagonal wurtzite structure. The particle size of the GZO films were increase as doping content increases from 2% to 5%. The 2% Ga doped ZnO film has electrical resistivity is 0.11 Omega cm. From the transmittance spectra, it was found that GZO films possessed high transparency above 70% with the wavelength range from 400 to 800 nm. We find 2% as optimum doping concentration for Ga doped ZnO for obtaining highest conducting and transparent layers.