Growth and Characterization Studies of ZnS Thin Films Prepared by Single Source Evaporation Technique

Zinc sulfide thin films are deposited on glass substrates using thermal evaporation technique. Effect of thickness on the properties of as-deposited ZnS films is studied. ZnS films exhibited cubic structure with preferential orientation along (111) plane. All the films exhibited n-type conductivity with resistivity ranging in the order of 10(5) to 10(6) Omega-cm. The transmittance in the visible region is in the range of 80 to 89% and the band gap of the material varied from 3.65 to 3.52 eV. The as-deposited films can be used as window layer for fabrication of hetero-junction solar cell.