Bias Current Dependence of Resistivity in Co0.4Fe0.4B0.2 Ultrathin Film Prepared by RF Magnetron Sputtering

Ultrathin film of Co0.4Fe0.4B0.2 was prepared on p-t 'pc Si (100) substrate by RF magnetron sputtering. X-Ray Reflectivity and Atomic Force Microscopy measurements were performed to estimate the thickness and surface rou2lmess of the film Electrical transport measurements were performed by four-probe method in a current-in-plane (OP) geometry. Presence of non-linearity in the current-voltage (I-V) characteristics was observed at higher current range. The electrical resistivity was found to change by several orders of magnitude (10(5)) by changing the bias current from nano-ampere (nA) to milli-ampere (mA) range. This bias current dependence of the resistivity has been explained by different transport mechanisms.