Single crystal growth and electrical transport properties of -Mo4O11
JOURNAL OF ALLOYS AND COMPOUNDS(2020)
摘要
Single crystals of quasi-two-dimensional charge-density-wave (CDW) material eta-Mo4O11 were successfully grown by chemical vapor transport (CVT) method with TeCl4 and I-2 as carrier gas, respectively. The obtained crystals with TeCl4 as carrier gas have a largest size of 16 x 6 x 0.8 mm(3) with high quality determined by x-ray single-crystal diffraction, chemical analysis and electrical transport measurements. Temperature dependent resistivity shows that eta-Mo4O11 is of highly anisotropy and undergoes successive CDW transitions at 105 K and 30 K, consistent with early reports. It is found that eta-Mo4O11 with TeCl4 as carrier gas has a relative higher Residual Resistance Ratio (RRR), carrier density and mobility than that with I-2 as carrier gas. This results in a much smaller magnetoresistance but pronounced Shubnikov-de Haas oscillations, providing opportunities to study the unusual oscillations of this compound beyond the quantum limit. For the Hall resistance, a drop above 10 T is reproduced corresponding to a steep increase of magnetoresistance. (C) 2020 Elsevier B.V. All rights reserved.
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关键词
Crystal growth,Charge-density-wave,Magnetotransport
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