Stability of zinc nitride thin-film transistors under positive and negative bias stress

•Electrical stability of Zn3N2 TFTs under negative bias stress and positive bias stress is presented.•After 24 h of rest period, the ΔVT under NBS and PBS is reversible.•The negative ΔVT can be recovered applying a NBS, and the positive ΔVT applying a PBS.•The C-V MOS capacitors under NBS and PBS, agrees with the ΔVT in the Zn3N2 TFTs.