Deep traps concentrations in ZnSe single crystals

•For high-resistance monocrystalline ZnSe, the determination of trap concentrations and luminescence centers, even at 50% accuracy, is an important task.•Differences in the obtained traps concentrations indicate the presence of an uncontrolled growth parameter of monocrystalline ZnSe.•Concentrations of traps are significantly smaller than the concentrations of recombination centers.•It seemed possible to get a ZnSe crystal with an even lower traps concentration as the proposed novel class detection, which can be employed as ionizing radiation detectors of pulsed the current of X-ray conductivity.