Evaluation Of Frequency And Temperature Dependence Of Power Losses Difference In Parallel Igbts

With the development of high power converters, safe operation of IGBT modules with parallel chips is of increasing importance. IGBT can work normally in safe range in the initial operation even if current imbalance is happening. However, if the uneven current state lasts too long, it is difficult to keep a uniform junction temperature, which can further lead to uneven distribution of the power losses. In severe cases, the device and converter may be damaged due to overheating. This paper studies the stability of such an interactive process with mathematical modelling backed by experiment. Because of the opposite sensitivities of switching and conduction losses to temperature under high current injection, the concept of 'inflection point frequency characteristic' is introduced to evaluate the trend of junction temperature mismatches between the parallel IGBT chips. The inflection point frequency at different current and temperature levels is tested to verify the model prediction, and the applicability of this approach in multi-chip parallel module is discussed. By establishing the relationship between the switching frequency and the thermal stability limit of parallel IGBTs, it can provide a feasible reference for improving the reliability of multi-chip parallel power devices.