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Epitaxial growth of deep ultraviolet light emitting diodes with two-step n-AlGaN layer

Byeongchan So,Changheon Cheon,Joohyoung Lee,Junchae Lee,Taemyung Kwak,Uiho Choi,JinDong Song,Joonyeon Chang,Okhyun Nam

Thin Solid Films（2020）

Cited 5|Views25
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Abstract
•The effect of two-step n-AlGaN layer was investigated.•The crystal and electrical quality of n-AlGaN was improved by inserting two-step.•The optical power of deep ultraviolet light emitting diode with two-step n-AlGaN was enhanced.
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Key words
Two-step deposition,n-Aluminum gallium nitride layer,Epitaxial growth,Deep ultraviolet light emitting diodes,High temperature metal organic chemical vapor deposition
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