Electron-lattice and electron-electron interactions and Debye temperature studied by temperature dependence of secondary electron emission from insulators

The formulas for temperature dependence of λ(χreal, Eg, T), λ(χreal, Eg, T)p, ẟ and σ of insulators with less impurities were deduced and proved to be true; λ(χreal, Eg, T) is the mean escape depth of secondary electrons emitted from insulators with efficient electron affinity χreal and band gap Eg at Kelvin temperature T, λ(χreal, Eg, T)p is the λ(χreal, Eg, T) due to electron-lattice scatterring in insulators, ẟ is secondary electron yield, σ is total ẟ. Analyses of data and the deduced formulas indicate that the temperature dependence of ẟ and σ of insulators with less impurities increase with the increasing [λ(χreal, Eg, T)/λ(χreal, Eg, T)p], and that λ(χreal, Eg, T), λ(χreal, Eg, T)p, ẟ and σ of insulators with less impurities decrease nearly linearly with increasing T in the range T > ΘD but decrease nonlinearly with increasing T in the range mΘD < T < ΘD, ΘD is Debye temperature, m of a given insulator is a constant which is < 0.4. The method of obtaining λ(χreal, Eg, T)Mee and corresponding χreal by secondary electron emission (SEE) was presented, λ(χreal, Eg, T)Mee is the λ(χreal, Eg, T) due to electron–electron scatterring in insulator. It concludes that the method presented here to obtain special formula for λ(χreal, Eg, T)p and corresponding χreal is a good method to research electron-lattice interaction by SEE, and that the method presented here to obtain values of λ(χreal, Eg)Mee and corresponding χreal is a good method to research electron–electron interaction by SEE. According to the values of ΘD, experimental σ, characteristics of temperature dependence of ẟ and σ and deduced formulas, it concludes that the method presented here to determine ΘD by SEE is a better method to determine ΘD of insulator with less impurities.