Thermometric SOI lateral diodes for bolometric application: Comparison between Schottky and p-i-n diodes
Solid-State Electronics（2020）
Abstract
•Thermal behaviour of 50-nm-thick SOI lateral diodes is presented.•Room temperature operation and cryogenic regime at 80 K were both studied.•TCC is extracted from both simulated and experimental I-V-T curves.•Schottky PtSi/n-Si and implanted p-i-n diodes are compared.
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Key words
SOI,Lateral diodes,p-i-n diode,Schottky Barrier Diode,Thermometer,Bolometer
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