Memory effect in MIS structures with embedded all-inorganic colloidal silicon carbide (SiC) nanocrystals
2019 IEEE 14th Nanotechnology Materials and Devices Conference (NMDC)(2019)
Abstract
Colloidal all-inorganic silicon carbide (SiC) nanocrystals (NCs) have been introduced into Metal-Insulator-Semiconductor (MIS) structures with HfO
x
gate dielectric layers. The fabricated MIS structures were characterized by means of stress-and-sense measurements in terms of device capacitance, flat-band voltage shift, and retention time. The presented results have shown the feasibility of the application of SiC-NCs in memory structures.
MoreTranslated text
Key words
silicon carbide nanocrystal,memory,metalinsulator-semiconductor structure,electrical characterization,high-k dielectrics
AI Read Science
Must-Reading Tree
Example
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined