EUV resist sensitization and roughness improvement by PSCAR (TM) with in-line UV flood exposure system

Seiji Nagahara, Michael Carcasi,Gosuke Shiraishi,Yuya Kamei,Kathleen Nafus,Yukie Minekawa,Hiroyuki Ide,Yoshihiro Kondo,Takahiro Shiozawa,Keisuke Yoshida, Masashi Enomoto,Kosuke Yoshihara,Hideo Nakashima,Serge Biesemans,Ryo Shimada,Masaru Tomono,Kazuhiro Takeshita, Teruhiko Moriya, Makoto Hayakawa, Ryo Aizawa, Yoshitaka Konishi,Masafumi Hori,Ken Maruyama,Hisashi Nakagawa,Masayuki Miyake,Tomoki Nagai,Satoshi Dei,Takehiko Naruoka,Motoyuki Shima,Toru Kimura,Geert Vandenberghe,John S. Petersen,Danilo De Simone,Philippe Foubert,Hans-Juergen Stock, Balint Meliorisz,Akihiro Oshima,Seiichi Tagawa

ADVANCES IN PATTERNING MATERIALS AND PROCESSES XXXV（2018）

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摘要

Photosensitized Chemically Amplified Resist (TM) (PSCARTM)** 2.0's advantages and expectations are reviewed in this paper. Alpha PSCAR in-line UV exposure system ("Litho Enhancer") was newly installed at imec in a Tokyo Electron Ltd. (TEL (TM))'s CLEAN TRACK (TM) LITHIUS Pro (TM) Z connected to an ASML's NXE:3300. Using the Litho Enhancer, PSCAR 2.0 sensitization preliminary results show that suppression of roughness enhancement may occur while sensitivity is increased. The calibrated PSCAR 2.0 simulator is used for prediction of resist formulation and process optimization. The simulation predicts that resist contrast enhancement could be realized by resist formulation and process optimization with UV flood exposure.

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关键词

Photosensitized Chemically Amplified Resist,PSCAR,PSCAR 2.0,chemically amplified resist,sensitivity,LER,resist contrast,photosensitizer,photosensitizer precursor,in-line coater/developer,flood exposure,Litho Enhancer

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